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900V 60A APT60N90JC3
C OLMOS O
Power Semiconductors
Super Junction MOSFET
G
S D
S
* Ultra Low RDS(ON) * Low Miller Capacitance * Ultra Low Gate Charge, Qg * Avalanche Energy Rated * Extreme dv/dt Rated * Dual die (parallel) * Popular T-MAX Package
Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with two parallel MOSFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation.
S
ISOTOP (R)
OT
22
7
"UL Recognized"
file # E145592
D G S
MAXIMUM RATINGS
Symbol Parameter VDSS ID IDM VGS PD Drain-Source Voltage Continuous Drain Current @ TC = 25C Continuous Drain Current @ TC = 100C Pulsed Drain Current
1
All Ratings per die: TC = 25C unless otherwise specified.
APT60N90JC3 900 60 38 156 20 390 Volts Watts Amps UNIT Volts
Gate-Source Voltage Continuous Total Power Dissipation @ TC = 25C
TJ,TSTG Operating and Storage Junction Temperature Range TL dv/ dt IAR EAR EAS Lead Temperature: 0.063" from Case for 10 Sec. Drain-Source Voltage slope (VDS = 400V, ID = 36A, TJ = 125C) Avalanche Current
2 2 ( Id = 8.8A, Vdd = 50V ) ( Id = 8.8A, Vdd = 50V )
-55 to 150 300 50 8.8 2.9 1940
C V/ns Amps mJ
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
STATIC ELECTRICAL CHARACTERISTICS
Symbol BV(DSS) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 500A) Drain-Source On-State Resistance
3
MIN 900
TYP
MAX
UNIT Volts
(VGS = 10V, ID = 30A) 2.5
0.05 3
0.06 20 100 200 3.5
Ohms A nA Volts
9-2009 050-7242 Rev A
Zero Gate Voltage Drain Current (VDS = 900V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 900V, VGS = 0V, TC = 150C) Gate-Source Leakage Current (VGS = 20V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 5.8mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. "COOLMOSTM comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG." Microsemi Website - http://www.microsemi.com
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Symbol IS ISM VSD
dv
APT60N90JC3
Test Conditions
VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 450V ID = 60A @ 25C INDUCTIVE SWITCHING VGS = 15V VDD = 600V ID = 60A @ 25C RG = 4.3
5
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
4
MIN
TYP
MAX
UNIT pF
14000 13000 330 480 60 180 7 20 500 45 2130 2030 3010 2475
MIN TYP MAX
Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery Reverse Recovery Time (IS = 60A, di/dt = 100A/s) Reverse Recovery Charge (IS = 60A, di/dt = 100A/s) Peak Recovery Current (IS = 60A, di/dt = 100A/s) Characteristic Junction to Case Junction to Ambient
1 3
nC
ns
INDUCTIVE SWITCHING @ 25C VDD = 600V, VGS = 15V ID = 60A, RG = 4.3 INDUCTIVE SWITCHING @ 125C VDD = 600V, VGS = 15V ID = 60A, RG = 4.3
J
5
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
UNIT Amps
60 156 0.8
Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C MIN
(Body Diode) (VGS = 0V, IS = 30A)
6
/dt
dv
1.2
10
Volts V/ns ns C
/dt
t rr Q rr IRRM
1180 1300 50 66 90
95 TYP MAX
Amps
THERMAL CHARACTERISTICS Symbol RJC RJA UNIT C/W
0.26 40
1 Repetitive Rating: Pulse width limited by maximum junction 4 See MIL-STD-750 Method 3471 temperature 5 Eon includes diode reverse recovery. 2 Repetitive avalanche causes additional power losses that can 6 Maximum 125C diode commutation speed = di/dt 600A/s be calculated as PAV = EAR*f . Pulse width tp limited by Tj max. 3 Pulse Test: Pulse width < 380 s, Duty Cycle < 2%
Microsemi reserves the right to change, without notice, the specifications and information contained herein. 0.30 ZJC, THERMAL IMPEDANCE (C/W) D = 0.9 0.25 0.20 0.15 0.10 0.05 0 10-4 0.7 0.5
Note:
9-2009
PDM
0.3
t1 t2
050-7242 Rev A
0.1 0.05 10-3 SINGLE PULSE
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-2 0.1 1 10 RECTANGULAR PULSE DURATION (SECONDS) Figure 1, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
100
Typical Performance Curves
125 10 &15V 6V 100 IC, DRAIN CURRENT (A) 5.5V 75 ID, DRAIN CURRENT (A) 200 250
VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE
APT60N90JC3
TJ= -55C
150
50
5V
100 TJ= 25C 50 TJ= 125C 0 0 1 2 3 4 5 6 7 8
25
4.5V 4V
0
0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 2, Low Voltage Output Characteristics
NORMALIZED TO V
GS
VGS, GATE-TO-SOURCE VOLTAGE (V) FIGURE 3, Transfer Characteristics 70 60 ID, DRAIN CURRENT (A) 50 40 30 20 10
1.3
= 10V @ 47A
1.2 VGS = 10V VGS = 20V
IDR, REVERSE
1.1
1
0.9
0.8
20
40
60
80
100
1.20 BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) 1.15 1.10 1.05 1.0 0.95 0.90 0.85 0.10 0.75 0.70
ID, DRAIN CURRENT (A) FIGURE 4, RDS(ON) vs Drain Current
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 5, Maximum Drain Current vs Case Temperature 3 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 2. 5 2 1. 5 1 0. 5 0
0
25
-50 -25
0 25 50 75 100 125 150 TJ, Junction Temperature (C) FIGURE 6, Breakdown Voltage vs Temperature 000
-50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, On-Resistance vs Temperature
1.2 VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) 1.1
100 1 0.9 0.8 0.7 0.6 ID, DRAIN CURRENT (A)
10
10s
1
100ms DC line
-50
0 25 50 75 100 125 150 TC, Case Temperature (C) FIGURE 8, Threshold Voltage vs Temperature
-25
0.10
1 10 100 1000 VDS, DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 9, Maximum Safe Operating Area
050-7242 Rev A 9-2009
100s 1ms 10ms
Typical Performance Curves
100,000 Ciss 10,000 C, CAPACITANCE (pF) Coss 1000 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 12 10 VDS= 180V 8 6 4 2 0 VDS= 450V
I = 60A
D
APT60N90JC3
VDS= 720V
100
Crss
10
0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 10, Capacitance vs Drain-To-Source Voltage
300 IDR, REVERSE DRAIN CURRENT (A) TJ= +150C td(on) and td(off) (ns)
100 200 300 400 500 600 Qg, TOTAL GATE CHARGE (nC) FIGURE 11, Gate Charges vs Gate-To-Source Voltage 600 500 400 300 200 100 td(off)
V
DD G
0
100
= 600V
R
= 5W
TJ = =25C
T = 125C J L = 100H
10
0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (V) FIGURE 12, Source-Drain Diode Forward Voltage 0
V
DD G
1
td(on) 0 0 40 60 80 ID (A) FIGURE 13, Delay Times vs Current
V
DD G
20
100
7000
= 600V
= 600V
0 0 tr, and tf (ns) 0 0 0 0 0 0 0
R
= 5W
SWITCHING ENERGY (J)
T = 125C J L = 100H
tf
6000 5000 4000 3000 2000 1000
R
= 5W
T = 125C L = 100H EON includes diode reverse recovery.
J
tr
Eon
Eoff
20
40
60
80
100
0
0
ID (A) FIGURE 14 , Rise and Fall Times vs Current 10000 Eoff SWITCHING ENERGY (uJ) 8000
40 60 80 100 ID (A) FIGURE 15, Switching Energy vs Current
20
6000
Eon
9-2009
4000
V
DD
= 600V
I = 60A
D
050-7242 Rev A
2000
T = 125C J L = 100H EON includes diode reverse recovery.
0
10 15 20 25 30 RG, GATE RESISTANCE (Ohms) FIGURE 16, Switching Energy vs Gate Resistance
0
5
Typical Performance Curves
TJ = 125C 10% 90% Gate Voltage 90% td(off) Source Current Source Voltage tr 10%
APT60N90JC3
TJ = 125C Gate Voltage
td(on)
5%
5% Source Voltage Source Current
tf
10%
0
Switching Energy
Switching Energy
Figure 17, Turn-on Switching Waveforms and Definitions
Figure 18, Turn-off Switching Waveforms and Definitions
APT30DF60
V DD
I IC D
V DS VCE
G D.U.T.
Figure 19, Inductive Switching Test Circuit Figure 20, Inductive Switching Test Circuit
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322)
W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places)
11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
3.3 (.129) 3.6 (.143)
1.95 (.077) 2.14 (.084)
14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
* Source
Drain
* Emitter terminals are shorted internally. Current handling capability is equal for either Source terminal.
* Source Dimensions in Millimeters and (Inches)
Gate
Microsemi's products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7242 Rev A 9-2009

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